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2SA1707S-AN

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2SA1707S-AN

TRANS PNP 50V 3A 3NMP

Manufacturer: onsemi

Categories: Single Bipolar Transistors

Quality Control: Learn More

onsemi PNP Bipolar Junction Transistor (BJT), part number 2SA1707S-AN. This device features a 50V collector-emitter breakdown voltage and a maximum continuous collector current of 3A. The minimum DC current gain (hFE) is 140 at 100mA and 2V. With a transition frequency of 150MHz and a maximum power dissipation of 1W, it is suitable for applications requiring moderate power handling and switching speeds. The transistor exhibits a Vce(sat) of 700mV at 100mA and 2A. It is supplied in a 3-NMP (SC-71) package, suitable for through-hole mounting. This component finds application in various industrial and consumer electronics, including power supply circuits and general-purpose amplification.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-71
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic700mV @ 100mA, 2A
Current - Collector Cutoff (Max)1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce140 @ 100mA, 2V
Frequency - Transition150MHz
Supplier Device Package3-NMP
Current - Collector (Ic) (Max)3 A
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max1 W

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