2SA1705T-AN
TRANS PNP 50V 1A 3NMPManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi 2SA1705T-AN is a PNP bipolar junction transistor designed for power amplification and switching applications. This component features a collector-emitter breakdown voltage (Vce) of 50V and a continuous collector current (Ic) capability of 1A. With a transition frequency (fT) of 150MHz, it offers efficient operation in various signal processing tasks. The device boasts a maximum power dissipation of 900mW and a DC current gain (hFE) of at least 200 at 100mA collector current and 2V collector-emitter voltage. It is supplied in a 3-NMP (SC-71) package, suitable for through-hole mounting. The operating junction temperature range extends to 150°C. This transistor is commonly utilized in consumer electronics, automotive systems, and industrial control equipment.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-71 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 100mA, 2V |
| Frequency - Transition | 150MHz |
| Supplier Device Package | 3-NMP |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 900 mW |
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