2SA1705S-AN
TRANS PNP 50V 1A 3NMPManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi PNP Bipolar Junction Transistor (BJT), part number 2SA1705S-AN, offers a 50V collector-emitter breakdown voltage and a continuous collector current of 1A. This device features a transition frequency of 150MHz and a maximum power dissipation of 900mW. With a minimum DC current gain (hFE) of 100 at 100mA and 2V, it provides robust amplification characteristics. The saturation voltage at 500mA collector current and 50mA base current is a maximum of 500mV. Designed for through-hole mounting in a 3-NMP package (SC-71), this transistor is suitable for applications in consumer electronics and industrial control systems. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-71 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA, 2V |
| Frequency - Transition | 150MHz |
| Supplier Device Package | 3-NMP |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 900 mW |
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