2SA1593S-E
TRANS PNP 100V 2A TPManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi PNP Bipolar Junction Transistor, part number 2SA1593S-E. This through-hole device features a 100V collector-emitter breakdown voltage and a maximum collector current of 2A. It offers a minimum DC current gain (hFE) of 140 at 100mA and 5V, with a transition frequency of 120MHz. The transistor has a maximum power dissipation of 1W and an operating junction temperature of 150°C. The saturation voltage (Vce(sat)) is specified at a maximum of 600mV for 100mA base current and 1A collector current. The collector cutoff current (ICBO) is a maximum of 100nA. This component is commonly found in power supply circuits and general-purpose amplification applications. The package type is TO-251-3 Short Leads, IPAK, also referred to as TP.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 140 @ 100mA, 5V |
| Frequency - Transition | 120MHz |
| Supplier Device Package | TP |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 1 W |