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2SA1593S-E

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2SA1593S-E

TRANS PNP 100V 2A TP

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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onsemi PNP Bipolar Junction Transistor, part number 2SA1593S-E. This through-hole device features a 100V collector-emitter breakdown voltage and a maximum collector current of 2A. It offers a minimum DC current gain (hFE) of 140 at 100mA and 5V, with a transition frequency of 120MHz. The transistor has a maximum power dissipation of 1W and an operating junction temperature of 150°C. The saturation voltage (Vce(sat)) is specified at a maximum of 600mV for 100mA base current and 1A collector current. The collector cutoff current (ICBO) is a maximum of 100nA. This component is commonly found in power supply circuits and general-purpose amplification applications. The package type is TO-251-3 Short Leads, IPAK, also referred to as TP.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic600mV @ 100mA, 1A
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce140 @ 100mA, 5V
Frequency - Transition120MHz
Supplier Device PackageTP
Current - Collector (Ic) (Max)2 A
Voltage - Collector Emitter Breakdown (Max)100 V
Power - Max1 W

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