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2SA1552T-TL-H

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2SA1552T-TL-H

TRANS PNP 160V 1.5A TP-FA

Manufacturer: onsemi

Categories: Single Bipolar Transistors

Quality Control: Learn More

onsemi 2SA1552T-TL-H is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a 160V collector-emitter breakdown voltage (Vceo) and a maximum collector current (Ic) of 1.5A. With a power dissipation rating of 1W and a transition frequency (fT) of 120MHz, it is suitable for applications requiring moderate power handling and frequency response. The device exhibits a minimum DC current gain (hFE) of 200 at 100mA and 5V. Saturation voltage (Vce(sat)) is specified at a maximum of 500mV at 50mA collector current and 5mA base current. The 2SA1552T-TL-H is housed in a TP-FA (TO-252-3, DPAK) surface-mount package and supplied on tape and reel. This transistor finds utility in consumer electronics, industrial control, and power management circuits.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 100mA, 5V
Frequency - Transition120MHz
Supplier Device PackageTP-FA
Current - Collector (Ic) (Max)1.5 A
Voltage - Collector Emitter Breakdown (Max)160 V
Power - Max1 W

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