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2SA1507S

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2SA1507S

TRANS PNP 160V 1.5A TO126ML

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi 2SA1507S is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a 160V collector-emitter breakdown voltage (Vce) and a continuous collector current (Ic) capability of up to 1.5A. With a transition frequency (fT) of 120MHz and a maximum power dissipation of 1.5W, it is suitable for use in power supply circuits, audio amplifiers, and general industrial control systems. The minimum DC current gain (hFE) is 100 at 100mA collector current and 5V collector-emitter voltage. The transistor is housed in a TO-126ML (TO-225AA) package, facilitating through-hole mounting. Collector cutoff current (Icbo) is rated at a maximum of 1µA. Saturation voltage at 500mA collector current and 50mA base current is a maximum of 500mV. The device operates within an ambient temperature range up to 150°C.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-225AA, TO-126-3
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 100mA, 5V
Frequency - Transition120MHz
Supplier Device PackageTO-126ML
Current - Collector (Ic) (Max)1.5 A
Voltage - Collector Emitter Breakdown (Max)160 V
Power - Max1.5 W

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