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2SA1381FSTU

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2SA1381FSTU

TRANS PNP 300V 0.1A TO126-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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onsemi's 2SA1381FSTU is a PNP bipolar junction transistor designed for through-hole mounting in a TO-126-3 package. This component offers a maximum collector emitter breakdown voltage of 300V and a continuous collector current capability of 100mA. It features a transition frequency of 150MHz and a maximum power dissipation of 7W. The device exhibits a minimum DC current gain (hFE) of 160 at 10mA collector current and 10V collector emitter voltage. Saturation voltage (Vce Sat) is specified at a maximum of 600mV at 2mA base current and 20mA collector current. Operating temperature range is -55°C to 150°C. This transistor is suitable for applications in power supply circuits and general-purpose amplification.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-225AA, TO-126-3
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic600mV @ 2mA, 20mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce160 @ 10mA, 10V
Frequency - Transition150MHz
Supplier Device PackageTO-126-3
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)300 V
Power - Max7 W

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