2SA1381ESTU
TRANS PNP 300V 0.1A TO126-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi 2SA1381ESTU is a PNP bipolar junction transistor designed for robust performance in demanding applications. This component features a maximum collector-emitter breakdown voltage of 300 V and a continuous collector current capability of 100 mA. With a transition frequency of 150 MHz and a maximum power dissipation of 7 W, it is well-suited for amplification and switching circuits. The device offers a minimum DC current gain (hFE) of 100 at 10 mA collector current and 10 V collector-emitter voltage, with a Vce(sat) of 600 mV at 2 mA base current and 20 mA collector current. Packaged in a TO-126-3 (TO-225AA) through-hole configuration, the 2SA1381ESTU operates within an industrial temperature range of -55°C to 150°C. This transistor finds application in power supply circuits, audio amplification, and general-purpose switching within industrial and consumer electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 2mA, 20mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 10V |
| Frequency - Transition | 150MHz |
| Supplier Device Package | TO-126-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
| Power - Max | 7 W |
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