2SA1179N6-TB-E
TRANS PNP 50V 0.15A 3CPManufacturer: onsemi
Categories: Single Bipolar Transistors
Quality Control: Learn More
onsemi 2SA1179N6-TB-E is a PNP bipolar junction transistor designed for surface mount applications. This component offers a collector-emitter breakdown voltage of 50V and a continuous collector current capability up to 150mA. It features a transition frequency of 180MHz and a maximum power dissipation of 200mW. The device exhibits a minimum DC current gain (hFE) of 135 at 1mA collector current and 6V collector-emitter voltage. The saturation voltage (Vce(sat)) is 500mV maximum at 5mA base current and 50mA collector current. The collector cutoff current (ICBO) is a maximum of 100nA. This transistor is supplied in a 3-CP (SC-59/TO-236-3) package and is delivered on a Tape & Reel. It finds application in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 135 @ 1mA, 6V |
| Frequency - Transition | 180MHz |
| Supplier Device Package | 3-CP |
| Current - Collector (Ic) (Max) | 150 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
Request a Quote
Clients Also Buy
MJE200STU
TRANS NPN 25V 5A TO126-3
MMBT2907-D87Z
TRANS PNP 40V 0.8A SOT23-3
SMMBTA42LT3G
TRANS NPN 300V 0.5A SOT23-3
