2SA1179N6-CPA-TB-E
TRANS PNP 50V 0.15AManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi 2SA1179N6-CPA-TB-E is a PNP bipolar junction transistor designed for surface mount applications. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 150mA. With a transition frequency of 180MHz and a power dissipation of 200mW, it is suitable for general-purpose amplification and switching in consumer electronics and industrial control systems. The device offers a minimum DC current gain (hFE) of 200 at 1mA and 6V, and a Vce(sat) of 500mV at 5mA and 50mA. It is supplied in a TO-236-3, SC-59, SOT-23-3 package, delivered on tape and reel. The collector cutoff current (ICBO) is rated at 100nA.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 1mA, 6V |
| Frequency - Transition | 180MHz |
| Current - Collector (Ic) (Max) | 150 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
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