2SA1162YT1
TRANS PNP 50V 0.15A SC59Manufacturer: onsemi
Categories: Single Bipolar Transistors
Quality Control: Learn More
onsemi 2SA1162YT1 PNP Bipolar Junction Transistor. This surface mount device is housed in an SC-59 package (TO-236-3, SOT-23-3) suitable for tape and reel packaging. It features a collector-emitter breakdown voltage of 50 V and a maximum collector current of 150 mA. The DC current gain (hFE) is a minimum of 120 at 2 mA collector current and 6 V collector-emitter voltage. With a transition frequency of 80 MHz and a maximum power dissipation of 200 mW, this transistor is designed for applications requiring reliable amplification in a compact footprint. The Vce(sat) is specified at 300 mV maximum for a base current of 10 mA and collector current of 100 mA. This component is often utilized in consumer electronics and general-purpose switching applications. It operates within a temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 2mA, 6V |
| Frequency - Transition | 80MHz |
| Supplier Device Package | SC-59 |
| Current - Collector (Ic) (Max) | 150 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
Request a Quote
Clients Also Buy
BC547BTAR
TRANS NPN 45V 0.1A TO92-3
MJE200STU
TRANS NPN 25V 5A TO126-3
PN2369A_D27Z
TRANS NPN 15V 0.2A TO92-3
