2SA1162GT1
TRANS PNP 50V 0.15A SC59Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi 2SA1162GT1 is a PNP bipolar junction transistor (BJT) designed for surface mount applications. This component features a collector-emitter breakdown voltage of 50V and a continuous collector current capability of 150mA. The DC current gain (hFE) is specified at a minimum of 200 at 2mA collector current and 6V collector-emitter voltage. With a transition frequency of 80MHz and a maximum power dissipation of 200mW, the 2SA1162GT1 is suitable for general-purpose amplification and switching in various electronic circuits. The device is packaged in an SC-59 (TO-236-3) package and supplied on a tape and reel. Typical applications include consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 6V |
| Frequency - Transition | 80MHz |
| Supplier Device Package | SC-59 |
| Current - Collector (Ic) (Max) | 150 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
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