2SA1020RLRA
TRANSISTOR SS PNP 50V 2A TO-92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi 2SA1020RLRA is a PNP bipolar junction transistor designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage (Vce) of 50V and can handle a continuous collector current (Ic) of up to 2A, with a maximum power dissipation of 900mW. Its transition frequency (fT) is 100MHz, making it suitable for moderate-frequency circuit designs. The DC current gain (hFE) minimum specification is 70 at 500mA and 2V. The transistor exhibits a Vce(sat) of 500mV at 50mA base current and 1A collector current. It is packaged in a TO-92 (TO-226) through-hole package, supplied in bulk. This component finds utility in consumer electronics, industrial controls, and power supply circuits.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body (Formed Leads) |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 1A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 500mA, 2V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 900 mW |
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