2SA1020
TRANS PNP 50V 2A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi 2SA1020, a PNP Bipolar Junction Transistor, offers robust performance with a collector-emitter breakdown voltage of 50V and a maximum collector current of 2A. This component features a transition frequency of 100MHz and a maximum power dissipation of 900mW. Designed for through-hole mounting in a TO-92 (TO-226) package, the 2SA1020 exhibits a minimum DC current gain (hFE) of 70 at 500mA and 2V. Its collector cutoff current is a maximum of 1µA (ICBO). The saturation voltage (Vce Sat) is specified at a maximum of 500mV for an operating point of 50mA base current and 1A collector current. The operating temperature range is from -55°C to 150°C. This transistor is suitable for applications in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 1A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 500mA, 2V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 900 mW |
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