2N7051
TRANS NPN DARL 100V 1.5A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi 2N7051 is an NPN Darlington bipolar junction transistor (BJT) designed for high gain applications. This device features a collector-emitter breakdown voltage of 100V and a maximum continuous collector current of 1.5A. With a minimum DC current gain (hFE) of 1000 at 1A and 5V, and a transition frequency of 200MHz, it is suitable for switching and amplification tasks. The transistor exhibits a Vce(sat) of 1.5V at 100mA collector current and 100µA base current. Packaged in a TO-92-3 (TO-226-3) through-hole configuration, the 2N7051 operates across a temperature range of -55°C to 150°C. It finds application in various industrial and consumer electronics, including power control and general-purpose switching circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Darlington |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 100µA, 100mA |
| Current - Collector Cutoff (Max) | 200nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 1A, 5V |
| Frequency - Transition | 200MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 1.5 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 625 mW |
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