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2N6724

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2N6724

TRANS NPN DARL 40V 1A TO237

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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onsemi NPN Darlington Transistor, part number 2N6724. This Bipolar Junction Transistor (BJT) is housed in a TO-237AA package, facilitating through-hole mounting. The 2N6724 offers a collector-emitter breakdown voltage of 40V and a continuous collector current capability of 1A. It features a high DC current gain (hFE) of 4000 minimum at 1A and 5V. The saturation voltage (Vce(sat)) is specified at a maximum of 1.5V at 2mA base current and 1A collector current. With a maximum power dissipation of 1W, this device is suitable for applications in industrial control, power switching, and general-purpose amplification within the consumer electronics and industrial automation sectors.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-237AA
Mounting TypeThrough Hole
Transistor TypeNPN - Darlington
Operating Temperature-
Vce Saturation (Max) @ Ib, Ic1.5V @ 2mA, 1A
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce4000 @ 1A, 5V
Frequency - Transition-
Supplier Device PackageTO-237
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)40 V
Power - Max1 W

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