onsemi 2N6668G is a high-power PNP bipolar junction transistor (BJT) designed for demanding applications. This Darlington transistor offers a robust 8A continuous collector current capability and a breakdown voltage of 80V, making it suitable for power switching and amplification circuits. Its robust construction and high current handling capacity ensure reliable performance in a variety of industrial and power management systems. The 2N6668G is supplied in Bulk packaging. This component is frequently utilized in power supply regulation, motor control, and general-purpose high-current switching applications where efficiency and reliability are paramount.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet: