2N6667G
TRANS PNP DARL 60V 10A TO220Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi 2N6667G is a PNP Darlington bipolar transistor designed for robust power switching applications. This through-hole component, housed in a TO-220-3 package, offers a collector current capability of 10A with a maximum collector-emitter breakdown voltage of 60V. Featuring a significant DC current gain (hFE) of 1000 minimum at 5A and 3V, it provides high amplification for control circuits. The transistor exhibits a Vce(sat) of 3V maximum at 100mA collector current and 10A collector current. With a maximum power dissipation of 2W and an operating temperature range of -65°C to 150°C, the 2N6667G is suitable for use in industrial automation and power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP - Darlington |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 100mA, 10A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 5A, 3V |
| Frequency - Transition | - |
| Supplier Device Package | TO-220 |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 2 W |
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