2N6609
TRANS PNP 140V 16A TO204Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi 2N6609 is a PNP bipolar junction transistor (BJT) designed for high-power applications. This component features a 140V collector-emitter breakdown voltage (Vce) and a maximum collector current (Ic) of 16A, with a power dissipation capability of 150W. The transistor exhibits a minimum DC current gain (hFE) of 15 at 8A collector current and 4V Vce. Its saturation voltage (Vce Sat) is a maximum of 4V at 3.2A base current and 16A collector current. The 2N6609 is supplied in a TO-204AA (TO-3) package, suitable for through-hole mounting. Operating temperature range is from -65°C to 200°C (TJ). This device is utilized in power switching and amplification circuits across various industrial and automotive sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 4V @ 3.2A, 16A |
| Current - Collector Cutoff (Max) | 10mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 8A, 4V |
| Frequency - Transition | - |
| Supplier Device Package | TO-204 (TO-3) |
| Current - Collector (Ic) (Max) | 16 A |
| Voltage - Collector Emitter Breakdown (Max) | 140 V |
| Power - Max | 150 W |
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