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2N6520RLRAG

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2N6520RLRAG

TRANS PNP 350V 0.5A TO92

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi 2N6520RLRAG is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a maximum collector emitter breakdown voltage (Vce) of 350V and a continuous collector current (Ic) handling capability of up to 500mA. With a transition frequency (fT) of 200MHz and a maximum power dissipation of 625mW, it is suitable for use in a variety of industrial and consumer electronics, including power control, voltage regulation, and signal conditioning circuits. The device is supplied in a TO-92 (TO-226) package with formed leads for through-hole mounting and comes on a tape and reel for automated assembly. Key parameters include a minimum DC current gain (hFE) of 20 at 50mA and 10V, and a collector cutoff current (ICBO) of 50nA. The saturation voltage (Vce(sat)) is rated at 1V maximum for 5mA base current and 50mA collector current. The operating temperature range is -55°C to 150°C.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-226-3, TO-92-3 Long Body, Formed Leads
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1V @ 5mA, 50mA
Current - Collector Cutoff (Max)50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 50mA, 10V
Frequency - Transition200MHz
Supplier Device PackageTO-92 (TO-226)
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)350 V
Power - Max625 mW

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