2N6520RLRA
TRANS PNP 350V 0.5A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi 2N6520RLRA is a PNP bipolar junction transistor designed for general-purpose amplification and switching applications. This component features a 350V collector-emitter breakdown voltage and a maximum collector current of 500mA. It offers a transition frequency of 200MHz, with a minimum DC current gain (hFE) of 20 at 50mA and 10V. The transistor exhibits a Vce(sat) of 1V at 5mA and 50mA, and a collector cutoff current (ICBO) of 50nA. With a maximum power dissipation of 625mW, the 2N6520RLRA is housed in a TO-92 (TO-226) package and is supplied on a tape and reel. This device is suitable for use in industrial and consumer electronics where robust performance is required.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-226-3, TO-92-3 Long Body, Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 50mA, 10V |
| Frequency - Transition | 200MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 350 V |
| Power - Max | 625 mW |
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