2N6520BU
TRANS PNP 350V 0.5A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi 2N6520BU is a PNP bipolar junction transistor (BJT) designed for through-hole mounting in a TO-92-3 package. This component offers a Vce breakdown voltage of 350V and a continuous collector current capability of up to 500mA. It exhibits a minimum DC current gain (hFE) of 20 at 50mA collector current and 10V Vce, with a transition frequency of 200MHz. The maximum power dissipation is rated at 625mW, and it can operate at junction temperatures up to 150°C. Collector cutoff current (ICBO) is specified at a maximum of 50nA. Saturation voltage (Vce Sat) is 1V maximum at 5mA base current and 50mA collector current. This device is suitable for applications in industrial and consumer electronics requiring general-purpose switching and amplification.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 50mA, 10V |
| Frequency - Transition | 200MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 350 V |
| Power - Max | 625 mW |
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