2N6519BU
TRANS PNP 300V 0.5A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi PNP Bipolar Junction Transistor (BJT), part number 2N6519BU. This through-hole component features a 300V collector-emitter breakdown voltage and a maximum collector current of 500mA. It offers a transition frequency of 200MHz and a power dissipation of 625mW. The TO-92-3 package is suitable for applications requiring general-purpose amplification and switching. Key parameters include a minimum DC current gain (hFE) of 40 at 50mA and 10V, and a Vce saturation of 1V at 5mA and 50mA. The device operates within a temperature range of -55°C to 150°C. This transistor is commonly found in industrial and consumer electronics applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 50mA, 10V |
| Frequency - Transition | 200MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
| Power - Max | 625 mW |
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