Home

Products

Discrete Semiconductor Products

Transistors

Bipolar (BJT)

Single Bipolar Transistors

2N6517RLRPG

Banner
productimage

2N6517RLRPG

TRANS NPN 350V 0.5A TO92

Manufacturer: onsemi

Categories: Single Bipolar Transistors

Quality Control: Learn More

onsemi NPN Bipolar Junction Transistor, part number 2N6517RLRPG. This TO-92 packaged device offers a 350V collector-emitter breakdown voltage and a continuous collector current capability of 500mA. It features a transition frequency of 200MHz and a maximum power dissipation of 625mW. The device exhibits a minimum DC current gain (hFE) of 20 at 50mA collector current and 10V Vce. Vce(sat) is specified at 1V maximum for 5mA base current and 50mA collector current. Collector cutoff current (ICBO) is a maximum of 50nA. Operating temperature range is -55°C to 150°C. This component is commonly utilized in power supply regulation and general-purpose amplification applications across various industrial sectors. The 2N6517RLRPG is supplied in Tape & Box packaging.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Datasheet:
Technical Details:
PackagingTape & Box (TB)
Package / CaseTO-226-3, TO-92-3 Long Body, Formed Leads
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1V @ 5mA, 50mA
Current - Collector Cutoff (Max)50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 50mA, 10V
Frequency - Transition200MHz
Supplier Device PackageTO-92 (TO-226)
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)350 V
Power - Max625 mW

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
MPSA92ZL1G

TRANS PNP 300V 0.5A TO92

product image
MJE371G

TRANS PNP 40V 4A TO126

product image
MMBTA06_D87Z

TRANS NPN 80V 0.5A SOT23-3