2N6517RLRP
TRANS NPN 350V 0.5A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
Quality Control: Learn More
The onsemi 2N6517RLRP is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component offers a high collector-emitter breakdown voltage of 350V and a continuous collector current capability of 500mA, with a maximum power dissipation of 625mW. It features a transition frequency of 200MHz, making it suitable for moderate frequency operations. The device exhibits a minimum DC current gain (hFE) of 20 at 50mA and 10V, and a Vce(sat) of 1V at 5mA/50mA. Packaged in a TO-92 (TO-226) through-hole configuration with formed leads, it is supplied in Tape & Box (TB) packaging. The operating temperature range is from -55°C to 150°C. This transistor finds application in various electronic circuits, including power supply regulation, audio amplification, and general switching circuits across industries such as consumer electronics and industrial control.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 Long Body, Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 50mA, 10V |
| Frequency - Transition | 200MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 350 V |
| Power - Max | 625 mW |
Request a Quote
Clients Also Buy
MCH6203-TL-E
TRANS NPN 50V 1A 6MCPH
BC560CTA
TRANS PNP 45V 0.1A TO92-3
MJE371G
TRANS PNP 40V 4A TO126
