2N6517G
TRANS NPN 350V 0.5A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi 2N6517G is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This through-hole component, housed in a TO-92 (TO-226) package, offers a maximum collector-emitter breakdown voltage of 350V and a continuous collector current capability of 500mA. It features a transition frequency of 200MHz and a maximum power dissipation of 625mW. Key electrical characteristics include a minimum DC current gain (hFE) of 20 at 50mA and 10V, and a collector cutoff current (ICBO) of 50nA. The saturation voltage (Vce(sat)) is a maximum of 1V at 5mA base current and 50mA collector current. This device is suitable for use in industrial and consumer electronics, power supplies, and lighting control systems. It is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 50mA, 10V |
| Frequency - Transition | 200MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 350 V |
| Power - Max | 625 mW |
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