2N6517CBU
TRANS NPN 400V 0.5A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi 2N6517CBU is an NPN bipolar junction transistor designed for general-purpose switching and amplification applications. This component offers a breakdown voltage of 400V and a continuous collector current capability of 500mA. With a transition frequency of 200MHz and a maximum power dissipation of 625mW, it is suitable for use in power supply circuits, linear regulators, and general switching applications across various industrial sectors. The device features a low collector cutoff current of 50nA (ICBO) and a minimum DC current gain (hFE) of 20 at 50mA and 10V. The saturation voltage (Vce(sat)) is a maximum of 1V at 5mA base current and 50mA collector current. Supplied in a TO-92-3 package, the 2N6517CBU is intended for through-hole mounting and operates at an ambient temperature up to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 50mA, 10V |
| Frequency - Transition | 200MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 400 V |
| Power - Max | 625 mW |
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