2N6517BU
TRANS NPN 350V 0.5A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi 2N6517BU is a general-purpose NPN bipolar junction transistor. This component features a 350V collector-emitter breakdown voltage and a maximum collector current of 500mA. With a transition frequency of 200MHz and a maximum power dissipation of 625mW, the 2N6517BU is suitable for applications requiring moderate switching speeds and power handling. It has a minimum DC current gain (hFE) of 20 at 50mA and 10V, and a Vce(sat) of 1V at 5mA and 50mA. The collector cutoff current (ICBO) is specified at a maximum of 50nA. This transistor is provided in a TO-92-3 (TO-226-3) through-hole package, operating at junction temperatures up to 150°C. It finds use in various industrial and consumer electronics applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 50mA, 10V |
| Frequency - Transition | 200MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 350 V |
| Power - Max | 625 mW |