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2N6517

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2N6517

TRANS NPN 350V 0.5A TO92

Manufacturer: onsemi

Categories: Single Bipolar Transistors

Quality Control: Learn More

onsemi NPN Bipolar Junction Transistor, part number 2N6517. This through-hole device features a 350V collector-emitter breakdown voltage and a maximum collector current of 500mA. With a transition frequency of 200MHz and a power dissipation of 625mW, it is suitable for general-purpose amplification and switching applications. The TO-92 (TO-226) package ensures compatibility with standard PCB assembly processes. It exhibits a minimum DC current gain (hFE) of 20 at 50mA and 10V, with a collector cutoff current of 50nA. Operating temperature range is -55°C to 150°C. This component finds application in various electronic systems, including consumer electronics and industrial control.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-226-3, TO-92-3 Long Body
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1V @ 5mA, 50mA
Current - Collector Cutoff (Max)50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 50mA, 10V
Frequency - Transition200MHz
Supplier Device PackageTO-92 (TO-226)
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)350 V
Power - Max625 mW

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