2N6515
TRANS NPN 250V 0.5A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi 2N6515 is a NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It features a maximum collector-emitter breakdown voltage of 250V and a continuous collector current capability of 500mA. This device exhibits a transition frequency of 200MHz and a maximum power dissipation of 625mW. The DC current gain (hFE) is specified at a minimum of 45 at 50mA collector current and 10V collector-emitter voltage. Saturation voltage (Vce Sat) is 1V maximum at 5mA base current and 50mA collector current. The transistor is housed in a TO-92 (TO-226) package, suitable for through-hole mounting. Applications include power supply circuits, voltage regulation, and signal amplification across various industrial and consumer electronics sectors. The operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 45 @ 50mA, 10V |
| Frequency - Transition | 200MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 250 V |
| Power - Max | 625 mW |
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