2N6491
TRANS PNP 80V 15A TO220Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi's 2N6491 is a PNP bipolar junction transistor (BJT) designed for general-purpose power applications. This component features a 80V collector-emitter breakdown voltage (Vce(max)) and can handle a continuous collector current (Ic) of up to 15A. With a power dissipation rating of 1.8W and a transition frequency of 5MHz, it is suitable for switching and amplification tasks. The DC current gain (hFE) is a minimum of 20 at 5A and 4V. Saturation voltage (Vce(sat)) is specified at a maximum of 3.5V for an Ic of 15A and a base current (Ib) of 5A. The 2N6491 is packaged in a TO-220-3 configuration for through-hole mounting, offering a robust thermal path. It operates within a temperature range of -65°C to 150°C. This device finds application in power supplies, motor control circuits, and general industrial power switching.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 3.5V @ 5A, 15A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 5A, 4V |
| Frequency - Transition | 5MHz |
| Supplier Device Package | TO-220 |
| Current - Collector (Ic) (Max) | 15 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 1.8 W |
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