2N6428ATA
TRANS NPN 50V 0.2A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi 2N6428ATA is an NPN bipolar junction transistor designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 200mA. With a transition frequency of 700MHz and a power dissipation of 625mW, it is suitable for use in industrial and consumer electronics. The device exhibits a minimum DC current gain (hFE) of 250 at 100µA collector current and 5V collector-emitter voltage. The saturation voltage (Vce(sat)) is a maximum of 600mV at 5mA base current and 100mA collector current. Packaged in a TO-92-3 (TO-226AA) through-hole configuration with formed leads, this transistor is supplied in Tape & Box packaging. The operating junction temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 25nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 250 @ 100µA, 5V |
| Frequency - Transition | 700MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 200 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 625 mW |
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