2N6428ABU
TRANS NPN 50V 0.2A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi's 2N6428ABU is an NPN bipolar junction transistor designed for general-purpose amplification and switching applications. This component features a 50V collector-emitter breakdown voltage and a maximum collector current of 200 mA. With a transition frequency of 700 MHz and a power dissipation of 625 mW, it is suitable for applications requiring moderate speed and power handling. The device offers a minimum DC current gain (hFE) of 250 at 100µA collector current and 5V collector-emitter voltage. It is supplied in a TO-92-3 through-hole package, ideal for traditional PCB assembly. Typical industries utilizing this type of component include consumer electronics and industrial control systems. The transistor exhibits a Vce(sat) of 600mV at 5mA base current and 100mA collector current, with a collector cutoff current of 25nA. The operating junction temperature range is up to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 25nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 250 @ 100µA, 5V |
| Frequency - Transition | 700MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 200 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 625 mW |
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