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2N6427RLRAG

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2N6427RLRAG

TRANS NPN DARL 40V 0.5A TO92

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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onsemi 2N6427RLRAG is a high-gain NPN Darlington bipolar junction transistor. This component offers a collector-emitter breakdown voltage of 40V and a continuous collector current capability of 500mA. With a typical DC current gain (hFE) of 20000 at 100mA and 5V, it is suitable for applications requiring significant amplification. The saturation voltage (Vce Saturation) is a maximum of 1.5V at 500µA base current and 500mA collector current. The device dissipates a maximum power of 625 mW and operates within a temperature range of -55°C to 150°C. It is provided in a TO-92 (TO-226) package with formed leads, supplied on tape and reel. This transistor is commonly utilized in industrial control, power management, and general-purpose switching applications.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-226-3, TO-92-3 Long Body, Formed Leads
Mounting TypeThrough Hole
Transistor TypeNPN - Darlington
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.5V @ 500µA, 500mA
Current - Collector Cutoff (Max)1µA
DC Current Gain (hFE) (Min) @ Ic, Vce20000 @ 100mA, 5V
Frequency - Transition-
Supplier Device PackageTO-92 (TO-226)
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)40 V
Power - Max625 mW

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