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2N6427G

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2N6427G

TRANS NPN DARL 40V 0.5A TO92

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi 2N6427G is a NPN Darlington bipolar junction transistor. This component features a collector-emitter breakdown voltage of 40V and a maximum continuous collector current of 500mA. With a DC current gain (hFE) of 20000 minimum at 100mA and 5V, and a collector-emitter saturation voltage of 1.5V maximum at 500µA and 500mA, it is suitable for applications requiring high current gain. The transistor dissipates a maximum power of 625mW. It is packaged in a TO-92 (TO-226) through-hole package and operates within a temperature range of -55°C to 150°C. This device is commonly utilized in power switching and amplification circuits across various industrial sectors.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-226-3, TO-92-3 Long Body
Mounting TypeThrough Hole
Transistor TypeNPN - Darlington
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.5V @ 500µA, 500mA
Current - Collector Cutoff (Max)1µA
DC Current Gain (hFE) (Min) @ Ic, Vce20000 @ 100mA, 5V
Frequency - Transition-
Supplier Device PackageTO-92 (TO-226)
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)40 V
Power - Max625 mW

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