2N6427
TRANS NPN DARL 40V 0.5A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi 2N6427 is an NPN Darlington bipolar junction transistor (BJT). It features a collector-emitter breakdown voltage of 40V and a continuous collector current capability of 500mA. This device offers a substantial minimum DC current gain (hFE) of 20000 at 100mA and 5V. The collector-emitter saturation voltage (Vce(sat)) is a maximum of 1.5V at 500µA base current and 500mA collector current. With a maximum power dissipation of 625mW, the 2N6427 is housed in a TO-92 (TO-226) through-hole package. This component is suitable for applications in general purpose switching and amplification, commonly found in consumer electronics and low-power industrial control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Darlington |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 500µA, 500mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20000 @ 100mA, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 625 mW |
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