2N6426RLRA
TRANS NPN DARL 40V 0.5A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi 2N6426RLRA is an NPN Darlington bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component offers a high DC current gain (hFE) of at least 30,000 at 100mA and 5V, with a maximum collector current (Ic) of 500 mA. The collector-emitter breakdown voltage (Vce) is rated at 40V, and the saturation voltage (Vce Sat) is a maximum of 1.5V at 500µA base current and 500mA collector current. Dissipating up to 625 mW, it operates within a temperature range of -55°C to 150°C. Packaged in a TO-92 (TO-226) through-hole configuration, this device is supplied on a tape and reel (TR). It finds utility in consumer electronics, industrial controls, and power management circuits.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-226-3, TO-92-3 Long Body, Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Darlington |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 500µA, 500mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30000 @ 100mA, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 625 mW |
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