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2N6426G

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2N6426G

TRANS NPN DARL 40V 0.5A TO92

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi 2N6426G is an NPN Darlington bipolar transistor with a collector-emitter breakdown voltage of 40V and a continuous collector current capability of 500mA. This device exhibits a high DC current gain (hFE) of a minimum of 30000 at 100mA and 5V. The saturation voltage (Vce) is a maximum of 1.5V at 500µA base current and 500mA collector current. Designed for through-hole mounting, it is housed in a TO-92 (TO-226) package. The maximum power dissipation is 625mW, and it operates within an ambient temperature range of -55°C to 150°C. This component is suitable for applications in general-purpose switching and amplification, often found in consumer electronics and industrial control systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-226-3, TO-92-3 Long Body
Mounting TypeThrough Hole
Transistor TypeNPN - Darlington
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.5V @ 500µA, 500mA
Current - Collector Cutoff (Max)1µA
DC Current Gain (hFE) (Min) @ Ic, Vce30000 @ 100mA, 5V
Frequency - Transition-
Supplier Device PackageTO-92 (TO-226)
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)40 V
Power - Max625 mW

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