2N6426
TRANS NPN DARL 40V 0.5A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi 2N6426 is a high-gain NPN Darlington bipolar junction transistor designed for general-purpose amplification and switching applications. With a collector-emitter breakdown voltage (Vce) of 40V and a continuous collector current (Ic) of up to 500mA, this device offers a substantial DC current gain (hFE) of 30000 at 100mA and 5V. The transistor features a low saturation voltage of 1.5V at 500µA base current and 500mA collector current. It is packaged in a TO-92 (TO-226) through-hole configuration, suitable for robust circuit assembly. The 2N6426 is utilized across various industrial sectors including consumer electronics, telecommunications, and automotive systems where efficient amplification and switching are critical. Its operating temperature range is from -55°C to 150°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Darlington |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 500µA, 500mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30000 @ 100mA, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 625 mW |
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