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2N6341G

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2N6341G

TRANS NPN 150V 25A TO-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi 2N6341G is an NPN bipolar junction transistor (BJT) designed for robust power switching applications. This through-hole component, housed in a TO-204 (TO-3) package, offers a collector-emitter breakdown voltage of 150V and a continuous collector current capability of up to 25A. With a maximum power dissipation of 200W and a transition frequency of 40MHz, it is suitable for demanding power supply designs, motor control circuits, and industrial automation systems. Key parameters include a minimum DC current gain (hFE) of 50 at 500mA and 2V, and a collector-emitter saturation voltage (Vce(sat)) of 1.8V at 2.5A and 25A. The device operates across a wide temperature range of -65°C to 200°C.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:
Technical Details:
PackagingTray
Package / CaseTO-204AA, TO-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.8V @ 2.5A, 25A
Current - Collector Cutoff (Max)50µA
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 500mA, 2V
Frequency - Transition40MHz
Supplier Device PackageTO-204 (TO-3)
Current - Collector (Ic) (Max)25 A
Voltage - Collector Emitter Breakdown (Max)150 V
Power - Max200 W

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