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2N6288G

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2N6288G

TRANS NPN 30V 7A TO220

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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onsemi 2N6288G is a bipolar junction transistor (BJT) featuring an NPN configuration. This component offers a collector-emitter breakdown voltage (Vce) of 30V and a maximum continuous collector current (Ic) of 7A. With a power dissipation capability of 40W and a transition frequency (fT) of 4MHz, it is suitable for various power switching and amplification applications. The device exhibits a minimum DC current gain (hFE) of 30 at 3A collector current and 4V collector-emitter voltage. Its saturation voltage (Vce(sat)) is specified at a maximum of 3.5V for a 3A collector current and corresponding base current. The 2N6288G is housed in a TO-220 package and is designed for through-hole mounting. This transistor finds utility in industrial automation, power management, and general-purpose amplification circuits.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic3.5V @ 3A, 7A
Current - Collector Cutoff (Max)1mA
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 3A, 4V
Frequency - Transition4MHz
Supplier Device PackageTO-220
Current - Collector (Ic) (Max)7 A
Voltage - Collector Emitter Breakdown (Max)30 V
Power - Max40 W

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