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2N6109G

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2N6109G

TRANS PNP 50V 7A TO220

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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onsemi 2N6109G is a PNP bipolar junction transistor designed for general-purpose amplification and switching applications. This device features a 50V collector-emitter breakdown voltage and a maximum continuous collector current of 7A, with a power dissipation capability of 40W. The 2N6109G offers a minimum DC current gain (hFE) of 30 at 2.5A and 4V, and a transition frequency of 10MHz. Its saturation voltage is specified at a maximum of 3.5V with a base current of 3A driving a collector current of 7A. The transistor is housed in a TO-220-3 package, suitable for through-hole mounting. Operating temperature ranges from -65°C to 150°C. This component is commonly utilized in power supply circuits, audio amplifiers, and motor control systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature-65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic3.5V @ 3A, 7A
Current - Collector Cutoff (Max)1mA
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 2.5A, 4V
Frequency - Transition10MHz
Supplier Device PackageTO-220
Current - Collector (Ic) (Max)7 A
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max40 W

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