2N6052G
TRANS PNP DARL 100V 12A TO204Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi 2N6052G is a PNP Darlington bipolar junction transistor designed for high-power applications. This component features a 100V collector-emitter breakdown voltage and a maximum continuous collector current of 12A, with a power dissipation capability of 150W. The minimum DC current gain (hFE) is specified at 750 at 6A collector current and 3V collector-emitter voltage. The saturation voltage (Vce Sat) is a maximum of 3V at 120mA base current and 12A collector current. Mounting is facilitated via a through-hole configuration in a TO-204 (TO-3) package. Operating temperature ranges from -65°C to 200°C. This device is commonly utilized in power switching and amplification circuits across industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP - Darlington |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 120mA, 12A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 6A, 3V |
| Frequency - Transition | - |
| Supplier Device Package | TO-204 (TO-3) |
| Current - Collector (Ic) (Max) | 12 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 150 W |
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