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2N6045G

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2N6045G

TRANS NPN DARL 100V 8A TO220

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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onsemi 2N6045G is an NPN Darlington bipolar junction transistor. This device offers a 100V collector-emitter breakdown voltage and a continuous collector current of 8A, with a maximum power dissipation of 75W. Key electrical characteristics include a minimum DC current gain (hFE) of 1000 at 3A and 4V, and a Vce saturation of 2V at 12mA and 3A. The collector cutoff current is a maximum of 20µA. Designed for through-hole mounting, it is supplied in a TO-220-3 package. The operating temperature range is from -65°C to 150°C. This component is commonly utilized in power switching and amplification applications across various industrial sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 6 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Transistor TypeNPN - Darlington
Operating Temperature-65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic2V @ 12mA, 3A
Current - Collector Cutoff (Max)20µA
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 3A, 4V
Frequency - Transition-
Supplier Device PackageTO-220
Current - Collector (Ic) (Max)8 A
Voltage - Collector Emitter Breakdown (Max)100 V
Power - Max75 W

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