2N6039G
TRANS NPN DARL 80V 4A TO126Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi 2N6039G Transistor, NPN, Darlington configuration, with a 80V collector-emitter breakdown voltage and a maximum collector current of 4A. This device features a substantial DC current gain (hFE) of 750 minimum at 2A, 3V, and a low saturation voltage of 3V maximum at 40mA, 4A. It has a maximum power dissipation of 40W and operates within a temperature range of -65°C to 150°C. The 2N6039G is supplied in a TO-126 package, suitable for through-hole mounting. This component is commonly utilized in industrial applications requiring high current gain and switching capabilities.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Darlington |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 40mA, 4A |
| Current - Collector Cutoff (Max) | 100µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 2A, 3V |
| Frequency - Transition | - |
| Supplier Device Package | TO-126 |
| Current - Collector (Ic) (Max) | 4 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 40 W |
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