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2N6038G

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2N6038G

TRANS NPN DARL 60V 4A TO126

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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onsemi 2N6038G is an NPN Darlington bipolar junction transistor designed for power switching applications. This component features a 60V collector-emitter breakdown voltage (Vce(max)) and a continuous collector current (Ic(max)) capability of 4A, with a maximum power dissipation of 40W. The 2N6038G exhibits a minimum DC current gain (hFE) of 750 at 2A collector current and 3V Vce. Its saturation voltage (Vce(sat)) is a maximum of 3V at 40mA base current and 4A collector current. The transistor is housed in a TO-126 (TO-225AA) package with a through-hole mounting type. Operating temperature range is from -65°C to 150°C. This device is commonly utilized in industrial control, power supply, and general-purpose amplification circuits.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-225AA, TO-126-3
Mounting TypeThrough Hole
Transistor TypeNPN - Darlington
Operating Temperature-65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic3V @ 40mA, 4A
Current - Collector Cutoff (Max)100µA
DC Current Gain (hFE) (Min) @ Ic, Vce750 @ 2A, 3V
Frequency - Transition-
Supplier Device PackageTO-126
Current - Collector (Ic) (Max)4 A
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max40 W

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