2N6036G
TRANS PNP DARL 80V 4A TO126Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi's 2N6036G is a PNP Darlington bipolar junction transistor designed for robust performance in demanding applications. This component features a 80V collector-emitter breakdown voltage and a maximum collector current of 4A, with a significant power dissipation capability of 40W. Its high DC current gain (hFE) of 750 minimum at 2A and 3V ensures efficient amplification. The transistor exhibits a Vce saturation of 3V maximum at 40mA base current and 4A collector current. Packaged in a TO-126 (TO-225AA) through-hole configuration, it operates across a wide temperature range of -65°C to 150°C. This device is commonly employed in industrial automation, power control systems, and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP - Darlington |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 40mA, 4A |
| Current - Collector Cutoff (Max) | 100µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 2A, 3V |
| Frequency - Transition | - |
| Supplier Device Package | TO-126 |
| Current - Collector (Ic) (Max) | 4 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 40 W |
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