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2N6035G

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2N6035G

TRANS PNP DARL 60V 4A TO126

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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onsemi's 2N6035G is a PNP Darlington bipolar transistor designed for robust performance in demanding applications. This through-hole component, housed in a TO-126 package, offers a collector-emitter breakdown voltage of 60V and a maximum continuous collector current of 4A. It boasts a significant power dissipation capability of 40W and a high minimum DC current gain (hFE) of 750 at 2A and 3V, characteristic of Darlington configurations. The saturation voltage (Vce Sat) is specified at a maximum of 3V for 40mA base current and 4A collector current, with a collector cutoff current of 100µA. This device is suitable for use in industrial and consumer electronics, power switching, and amplification circuits. Operating temperature range is -65°C to 150°C (TJ).

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-225AA, TO-126-3
Mounting TypeThrough Hole
Transistor TypePNP - Darlington
Operating Temperature-65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic3V @ 40mA, 4A
Current - Collector Cutoff (Max)100µA
DC Current Gain (hFE) (Min) @ Ic, Vce750 @ 2A, 3V
Frequency - Transition-
Supplier Device PackageTO-126
Current - Collector (Ic) (Max)4 A
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max40 W

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