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2N5962

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2N5962

TRANS NPN 45V 0.1A TO92-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

Quality Control: Learn More

onsemi's 2N5962 is an NPN bipolar junction transistor featuring a 45V collector-emitter breakdown voltage and a maximum collector current of 100 mA. This through-hole component, housed in a TO-92-3 (TO-226AA) package, offers a minimum DC current gain (hFE) of 600 at 10mA and 5V. With a maximum power dissipation of 625 mW and an operating temperature range of -55°C to 150°C, the 2N5962 is suitable for general-purpose amplification and switching applications across various industrial sectors. The saturation voltage (Vce(sat)) is a maximum of 200mV at 500µA base current and 10mA collector current.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic200mV @ 500µA, 10mA
Current - Collector Cutoff (Max)2nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce600 @ 10mA, 5V
Frequency - Transition-
Supplier Device PackageTO-92-3
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)45 V
Power - Max625 mW

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