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2N5961

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2N5961

TRANS NPN 60V 0.1A TO92-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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onsemi NPN Bipolar Junction Transistor, part number 2N5961. This through-hole device, housed in a TO-92-3 package, features a collector-emitter breakdown voltage of 60V and a continuous collector current rating of 100mA. The 2N5961 offers a minimum DC current gain (hFE) of 150 at 10mA and 5V, with a saturation voltage (Vce(sat)) of 200mV maximum at 500µA base current and 10mA collector current. Maximum power dissipation is 625mW, and it operates within a temperature range of -55°C to 150°C. This component is suitable for applications in general-purpose amplification and switching circuits across various industrial sectors.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic200mV @ 500µA, 10mA
Current - Collector Cutoff (Max)2nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce150 @ 10mA, 5V
Frequency - Transition-
Supplier Device PackageTO-92-3
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max625 mW

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